Boron Nitride Nanotubes Suppliers USA
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Product | Description | |
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Boron nitride nanotubes Quick inquiry Where to buy Suppliers range | Boron nitride nanotubes. Group: Nanoparticles. | |
Boron Nitride Nanotubes Quick inquiry Where to buy Suppliers range | Crystalline. Uses: DryPowder; DryPowder, OtherSolid; DryPowder, WetSolid, OtherSolid; OtherSolid. Group: Nanoparticles. Alternative Names: BN Nts, BNNT, BNNTs, h-BN; hexagonal boron nitride; Boron mononitride; Nitridoborane; Nitriloborane. CAS No. 10043-11-5. IUPAC Name: azanylidyneborane. Molecular Weight: 24.82. Molecular Formula: BN;BN. SMILES: B>N. InChI: InChI=1S/BN/c1-2. InChIKey: PZNSFCLAULLKQX-UHFFFAOYSA-N. Melting Point: 2.29 g/cm³. Purity: 99%, 99.9%, 99.99%, 99.999%. Density: 1.9 to 2.1 g/cm³. | |
Boron Nitride Nanotubes Quick inquiry Where to buy Suppliers range | Boron Nitride Nanotubes. Group: Other Nanomaterials. CAS No. 7440-42-8. Molecular Weight: BNNT. Molecular Formula: 29.88 g/mol. Purity: >99.9%. Density: 2.29 g/cm³. | |
Boron Nitride Nanotubes (B) Bamboo structure Quick inquiry Where to buy Suppliers range | Boron Nitride Nanotubes (B) Bamboo structure. Uses: DryPowder; DryPowder, OtherSolid; DryPowder, WetSolid, OtherSolid; OtherSolid. Group: Nanotubes. CAS No. 10043-11-5. IUPAC Name: azanylidyneborane. Molecular Weight: 24.82g/mol. Molecular Formula: BN;BN. SMILES: B#N. InChI: InChI=1S/BN/c1-2. InChIKey: PZNSFCLAULLKQX-UHFFFAOYSA-N. | |
Boron Nitride Nanotubes (BNNT) Quick inquiry Where to buy Suppliers range | Boron Nitride Nanotubes (BNNT). Group: Inorganic Nanomaterials. CAS No. 7440-42-8. Purity: 40-50%. | |
Boron Nitride Nanotubes (C) Cylindrical structure Quick inquiry Where to buy Suppliers range | Boron Nitride Nanotubes (C) Cylindrical structure. Uses: DryPowder; DryPowder, OtherSolid; DryPowder, WetSolid, OtherSolid; OtherSolid. Group: Nanotubes. CAS No. 10043-11-5. IUPAC Name: azanylidyneborane. Molecular Weight: 24.82g/mol. Molecular Formula: BN;BN. SMILES: B#N. InChI: InChI=1S/BN/c1-2. InChIKey: PZNSFCLAULLKQX-UHFFFAOYSA-N. | |
Boron Nitride Carbon Nanotubes / CNTs Doped with 50wt% BN Nanopowder Quick inquiry Where to buy Suppliers range | Boron Nitride Carbon Nanotubes / CNTs Doped with 50wt% BN Nanopowder. Grades: 97%. Product ID: ACMA00020318. | |
Boron Nitride (BN) Micropowder - 100 grams Quick inquiry Where to buy Suppliers range | PureTubes are produced by arch discharge or plasma torch. The diameter of the semiconducting single walled nanotubes range in 1.2-1.7 nm, whereas the length varies from 100nm to 4μm. These pure nanotubes have less than 1% of catalyst impurity. Uses: BN Ultrafine Powder is ideal to use for creating BN solutions. BN solution havs a range of applications, such as transistors, solar cells, and energy storage devices. BN solution can also be used in composite materials. Grades: 0.98. Product ID: ACMA00020970. Density: 1.7-1.9 g/cm3 at 25 °C (lit.). | |
Boron Nitride (BN) Ultrafine Powder - 5 Grams Quick inquiry Where to buy Suppliers range | Single walled nanotubes were prepared by the electric arc discharge method. The SWNTs were functionalized by purifying them in nitric acid. The carboxylic acid (-COOH) functionality along the length of the nanotube can be derivatized with a variety of functional groups. The average diameter of the nanotubes is 1.4nm ± 0.1nm. Transport properties of the SWNTs in soil was studied. Uses: BN Ultrafine Powder is ideal to use for creating BN solutions. BN solution havs a range of applications, such as transistors, solar cells, and energy storage devices. BN solution can also be used in composite materials. Grades: 0.99. Product ID: ACMA00020971. Solubility: H2O: dispersible 0.1 mg/mL. | |
Single Layer Hexagonal Boron Nitride on 285 nm SiO2/Si: 4 Pack Quick inquiry Where to buy Suppliers range | Multi-walled carbon nanotubes (MWCNT) are vertically aligned on a Si substrate with a high density. Since all the MWCNTs are bundled by van der Walls force, CNT web is drawn easily by pinching an edge of the array out from the substrate. The web is very light weight and robust, and sometimes semi-transparent.Crystal quality of CNT is examined by Raman scattering measurement. Intensity ratio of G-peak (1580 cm-1) and D-peak (1350 cm-1) represents quality of graphitization of carbon materials. G/D of our CNT is ~3, showing high crystal quality. Uses: BN on SiO2/Si wafers are ideal for creating graphene/BN interfaces, allowing the graphene to be precisely gated, increasing mobility, and reducing scattering. h-BN is appealing as a substrate for graphene-based electronics because its surface is atomically smooth, it is free of dangling bonds, and has an analogous structure to graphene. Using our h-BN on SiO2/Si wafers in conjunction with graphene, we encourage you to explore graphene heterostructures for transistor applications. Product ID: ACMA00020976. |