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| Product | Description | |
|---|---|---|
| Bismuth Indium Lead Tin eutectic ingot, alloy 136, 99.9% (metals basis) | Bismuth Indium Lead Tin eutectic ingot, alloy 136, 99.9% (metals basis). Group: Alloys. |  |
| Bismuth Indium Tin ingot (Field's metal) | Bismuth Indium Tin ingot (Field's metal). Group: Alloys. | |
| Indium, ingot | Indium, ingot. Grades: 99.999% Extremely High (>=99%). CAS No. 7440-74-6. Pack Sizes: Gram Quantities: 10 gm, 50 gm. Order Number: 1996. |  www.prochemonline.com |
| Indium Tin eutectic ingot, 99.99% (metals basis) | Indium Tin eutectic ingot, 99.99% (metals basis). Group: Alloys. | |
| Indium Arsenide | Indium Arsenide is a narrow bandgap semiconductor, making it a good material for electronic devices operating at very high speed (and low power) electronics and for infrared detectors. Uses: Designed for use in research and industrial production. Additional or Alternative Names: InAs; Indium Monoarsenide; Arsinetriylindium(III); indiganylidynearsane. Product Category: Organic & Printed Electronics. Appearance: Gray crystalline solid in various forms - pieces, powder, granules, ingot, wafer, target. CAS No. 1303-11-3. Molecular formula: InAs. Mole weight: 189.74. Purity: >99.0%N. IUPACName: indiganylidynearsane. Canonical SMILES: [As]#[In]. ECNumber: 215-115-3. Product ID: ACM1303113. Alfa Chemistry ISO 9001:2015 Certified. |  |
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