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| Product | Description | |
|---|---|---|
| Silicon nitride | DryPowder. Group: Si3n4. Product ID: 2, 4, 6, 7-tetraza-1, 3, 5-trisilahexacyclo[3.1.1.01, 4.02, 5.03, 6.03, 7]heptane. Molecular formula: 140.28g/mol. Mole weight: Si3N4. InChI=1S/N4Si3/c1-5-2-6(1)3(5)7(1, 2)4(5)6. HQVNEWCFYHHQES-UHFFFAOYSA-N. 0.9999. |  |
| Silicon Nitride | DryPowder. Group: 3d printing materials. CAS No. 12033-89-5. Pack Sizes: 10 g; 100 g. Product ID: 2, 4, 6, 7-tetraza-1, 3, 5-trisilahexacyclo[3.1.1.01, 4.02, 5.03, 6.03, 7]heptane. Molecular formula: 140.28 g/mol. Mole weight: N4Si3. N12[Si]34N5[Si]16N3[Si]25N46. InChI=1S/N4Si3/c1-5-2-6(1)3(5)7(1, 2)4(5)6. HQVNEWCFYHHQES-UHFFFAOYSA-N. > 99.99%. | |
| Silicon Nitride/carbide nanoparticles | Silicon Nitride/carbide nanoparticles. Group: Compounds nanoparticles. | |
| Silicon Nitride Nanofiber | DryPowder. Group: Nanopowders. Alternative Names: Trisilicon tetranitride; Nierite. CAS No. 12033-89-5. Product ID: 2, 4, 6, 7-tetraza-1, 3, 5-trisilahexacyclo[3.1.1.01, 4.02, 5.03, 6.03, 7]heptane. Molecular formula: 140.28. Mole weight: Si3N4;N4Si3. N13[Si]25N4[Si]16N2[Si]34N56. InChI=1S/N4Si3/c1-5-2-6(1)3(5)7(1, 2)4(5)6. HQVNEWCFYHHQES-UHFFFAOYSA-N. >80%. | |
| Silicon Nitride Nanofiber | DryPowder. Group: other nano materials. Alternative Names: Trisilicon tetranitride; Nierite. CAS No. 12033-89-5. Product ID: 2, 4, 6, 7-tetraza-1, 3, 5-trisilahexacyclo[3.1.1.01, 4.02, 5.03, 6.03, 7]heptane. Molecular formula: 140.28. Mole weight: Si3N4;N4Si3. N13[Si]25N4[Si]16N2[Si]34N56. >80%. | |
| Silicon Nitride Nanoparticle Dispersion | DryPowder. Group: Nanoparticles. Alternative Names: Silicon Nitride nanopowder suspension, aqueous Silicon Nitride nanoparticle solution, Silicon Nitride nanofluid. CAS No. 12033-89-5. Product ID: 2, 4, 6, 7-tetraza-1, 3, 5-trisilahexacyclo[3.1.1.01, 4.02, 5.03, 6.03, 7]heptane. Molecular formula: 140.28g/mol. Mole weight: Si3N4;N4Si3. N12[Si]34N5[Si]16N3[Si]25N46. InChI=1S/N4Si3/c1-5-2-6(1)3(5)7(1, 2)4(5)6. HQVNEWCFYHHQES-UHFFFAOYSA-N. | |
| Silicon nitride nanoparticles | Silicon nitride nanoparticles. Group: Nanopowder compoundscompounds nanoparticles. >99.9%. | |
| Silicon Nitride (Si3N4) | Silicon Nitride (Si3N4). Group: Magnetic nanoparticles. Alternative Names: High Purity Silicon Nitride (Si3N4); 99.9% Silicon Nitride (Si3N4); 99.99% Silicon Nitride (Si3N4); ; high purity trisilicon tetranitride; high purity silicon(IV) nitride; high purity silicon nitride. 3N-4N. | |
| Silicon Nitride (Si3N4) Crucible | Silicon Nitride (Si3N4) Crucible. Group: Magnetic nanoparticles. Alternative Names: Si3N4 Crucible, Silicon Nitride Crucible, Si3N4 Ceramic Crucible, Silicon Nitride Ceramic Crucible. 97%-99%. | |
| Silicon Nitride (Si3N4) Custom Parts | Silicon Nitride (Si3N4) Custom Parts. Group: Magnetic nanoparticles. Alternative Names: Si3N4 Custom Parts, Silicon Nitride Custom Parts, Si3N4 Ceramic Custom Parts, Silicon Nitride Ceramic Custom Parts. 97%-99%. | |
| Silicon Nitride (Si3N4) Plate, Sheet | Silicon Nitride (Si3N4) Plate, Sheet. Group: Magnetic nanoparticles. Alternative Names: Si3N4 Plate, Sheet, Silicon Nitride Plate, Sheet, Si3N4 Ceramic Plate, Sheet, Silicon Nitride Ceramic Plate, Sheet. 97%-99%. | |
| Silicon Nitride Si3N4 Powder | Silicon Nitride Si3N4 Powder. Group: Nitride powders. CAS No. 12033-89-5. Molecular formula: 140.2833. Mole weight: Si3N4. | |
| Silicon Nitride (Si3N4) Rod | Silicon Nitride (Si3N4) Rod. Group: Magnetic nanoparticles. Alternative Names: Si3N4 Rod, Silicon Nitride Rod, Si3N4 Ceramic Rod, Silicon Nitride Ceramic Rod. 97%-99%. | |
| Silicon Nitride (Si3N4) Sputtering Targets | Silicon Nitride (Si3N4) Sputtering Targets. Group: Sputtering targets. Alternative Names: Silicon Nitride (Si3N4) Sputtering Targets, Si3N4 Sputtering Target, Si3N4 Sputter Target, Si3N4 Target, Silicon Nitride Sputtering Target, Silicon Nitride Sputter Target, Silicon Nitride Target. 99.5%. | |
| Silicon Nitride (Si3N4) Thermowell | Silicon Nitride (Si3N4) Thermowell. Group: Magnetic nanoparticles. Alternative Names: Si3N4 Thermowell, Silicon Nitride Thermowell, Si3N4 Ceramic Thermowell, Silicon Nitride Ceramic Thermowell. 97%-99%. | |
| Silicon Nitride (Si3N4) Tube, Ring | Silicon Nitride (Si3N4) Tube, Ring. Group: Magnetic nanoparticles. Alternative Names: Si3N4 Tube, Ring, Silicon Nitride Tube, Ring, Si3N4 Ceramic Tube, Ring, Silicon Nitride Ceramic Tube, Ring. 97%-99%. | |
| Silicon aluminum oxynitride | Silicon aluminum oxynitride. Group: Phosphors - phosphor materials. Alternative Names: Aluminum silicon nitride oxide, Sialon, Silica aluminum nitride. CAS No. 112760-32-4. Molecular formula: 306.01. Mole weight: Al6N6O2Si. | |
| Silicon (IV) Nitride | SILICON (IV) NITRIDE, 97% pure, 8-16 microns median point, Formula: Si3N4. CAS No. 12033-89-5. Noah Chemicals San Antonio, Texas. ISO 9001:2015 Certified. Request a Quote Today! |  Texas TX |
| Silicon (IV) Nitride | SILICON (IV) NITRIDE, 99.9% pure, w/0.5% Magnesium Oxide, -325 mesh, Formula: Si3N4/0.5% MgO. CAS No. 12033-89-5. Noah Chemicals San Antonio, Texas. ISO 9001:2015 Certified. Request a Quote Today! | Texas TX |
| Silicon (IV) Nitride | SILICON (IV) NITRIDE, 99.9% pure, w/1.5% Magnesium Oxide, < 10 mu avg., Formula: Si3N4/1.5% MgO. CAS No. 12033-89-5. Noah Chemicals San Antonio, Texas. ISO 9001:2015 Certified. Request a Quote Today! | Texas TX |
| Silicon (IV) Nitride | SILICON (IV) NITRIDE, 99.9% pure, w/2% Magnesium Oxide, < 10 mu avg., Si{3}N{4} / 2% MgO. Noah Chemicals San Antonio, Texas. ISO 9001:2015 Certified. Request a Quote Today! | Texas TX |
| Silicon (IV) Nitride | SILICON (IV) NITRIDE, ALPHA, 99.7% pure, < 2 microns average, Formula: Si3N4. CAS No. 12033-89-5. Noah Chemicals San Antonio, Texas. ISO 9001:2015 Certified. Request a Quote Today! | Texas TX |
| Silicon (IV) Nitride | SILICON (IV) NITRIDE, ALPHA, 99.9% pure, < 1 micron average, Formula: Si3N4. CAS No. 12033-89-5. Noah Chemicals San Antonio, Texas. ISO 9001:2015 Certified. Request a Quote Today! | Texas TX |
| Silicon(IV) nitride, MgO binder, sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.125in) thick, 99.9% (metals basis) | Silicon(IV) nitride, MgO binder, sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.125in) thick, 99.9% (metals basis). Group: Evaporation materials. | |
| Silicon(IV) nitride, MgO binder, sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.125in) thick, 99.9% (metals basis) | Silicon(IV) nitride, MgO binder, sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.125in) thick, 99.9% (metals basis). Group: Evaporation materials. | |
| Silicon(IV) nitride, MgO binder, sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.250in) thick, 99.9% (metals basis) | Silicon(IV) nitride, MgO binder, sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.250in) thick, 99.9% (metals basis). Group: Evaporation materials. | |
| Silicon nitride Nanopowder<50NM | Silicon nitride Nanopowder<50NM. CAS No: 12033-89-5 |  Sarchem Laboratories New Jersey NJ |
| 3-Aminopropyltriethoxysilane | 3-Aminopropyltriethoxysilane (APTES) acts as a strong glue to immobilize biomolecules such as antibodies and enzymes to silicon and silicon derivatives such as silicon nitride (Si 3 N 4 )) on. 3-Aminopropyltriethoxysilane also acts as a spacer, providing biomolecules with more spatial freedom during immobilization for higher specific activity. 3-Aminopropyltriethoxysilane can form a more stable, sensitive, and highly biocompatible bioanalytical platform by immobilizing biomolecules onto some solid materials, electrode materials, nanomaterials, and nanocomposites [1] [2]. Uses: Scientific research. Group: Biochemical assay reagents. Alternative Names: γ-Aminopropyltriethoxysilane; APTES. CAS No. 919-30-2. Pack Sizes: 10 g; 50 g; 100 g. Product ID: HY-D0175. |  |
| Graphene Oxide (GO) TEM Support Films | Graphene Oxide (GO) support film is available as Single Layer (0.6~1nm) or Double Layer (1~1.5nm) measured by EELS. It is hydrophilic and naturally placed over the ultra-flat Silicon Dioxide Substrate, Lacey Carbon (300 Mesh Copper TEM Grids) or Holy Silicon Nitride Membranes with typically 50-70% coverage. Available in package of 5, 10 or 25 pieces. A. 300 Mesh Copper TEM grid with Lacey Carbon film; B. 00nm-thick 2μm Diameter Holey Silicon Nitride Membrane on 200μm-thick Silicon Substrate; C. 5x5mm 675μm-thick Silicon Die with 200nm Thermal Oxide. Uses: 1) catalyst2) supercapacitors3) solar energy4) graphene semiconductor chips5) conductive graphene film6) graphene computer memory7) biomaterials8) transparent conductive coatings. Group: Graphenes. | |
| Graphene Oxide (GO) TEM Support Films | Graphene Oxide (GO) support film is available as Single Layer (0.6~1nm) or Double Layer (1~1.5nm) measured by EELS. It is hydrophilic and naturally placed over the ultra-flat Silicon Dioxide Substrate, Lacey Carbon (300 Mesh Copper TEM Grids) or Holy Silicon Nitride Membranes with typically 50-70% coverage. Available in package of 5, 10 or 25 pieces. A. 300 Mesh Copper TEM grid with Lacey Carbon film; B. 00nm-thick 2μm Diameter Holey Silicon Nitride Membrane on 200μm-thick Silicon Substrate; C. 5x5mm 675μm-thick Silicon Die with 200nm Thermal Oxide. Uses: 1) catalyst2) supercapacitors3) solar energy4) graphene semiconductor chips5) conductive graphene film6) graphene computer memory7) biomaterials8) transparent conductive coatings. Group: other nano materials. | |
| Silicon dioxide | Nanoparticles: Oxides, Nitrides, and Other Ceramics. Uses: For analytical and research use. Group: Reagents. CAS No. 7631-86-9. |  |
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