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SiliconNitride (Si3N4). Group: Magnetic nanoparticles. Alternative Names: High Purity SiliconNitride (Si3N4); 99.9% SiliconNitride (Si3N4); 99.99% SiliconNitride (Si3N4); ; high purity trisilicon tetranitride; high purity silicon(IV) nitride; high purity siliconnitride. 3N-4N.
SiliconNitride (Si3N4) Crucible
SiliconNitride (Si3N4) Crucible. Group: Magnetic nanoparticles. Alternative Names: Si3N4 Crucible, SiliconNitride Crucible, Si3N4 Ceramic Crucible, SiliconNitride Ceramic Crucible. 97%-99%.
SiliconNitride (Si3N4) Rod. Group: Magnetic nanoparticles. Alternative Names: Si3N4 Rod, SiliconNitride Rod, Si3N4 Ceramic Rod, SiliconNitride Ceramic Rod. 97%-99%.
SILICON (IV) NITRIDE, 97% pure, 8-16 microns median point, Formula: Si3N4. CAS No. 12033-89-5. Noah Chemicals San Antonio, Texas. ISO 9001:2015 Certified. Request a Quote Today!
Texas TX
Silicon (IV) Nitride
SILICON (IV) NITRIDE, 99.9% pure, w/0.5% Magnesium Oxide, -325 mesh, Formula: Si3N4/0.5% MgO. CAS No. 12033-89-5. Noah Chemicals San Antonio, Texas. ISO 9001:2015 Certified. Request a Quote Today!
Texas TX
Silicon (IV) Nitride
SILICON (IV) NITRIDE, 99.9% pure, w/1.5% Magnesium Oxide, < 10 mu avg., Formula: Si3N4/1.5% MgO. CAS No. 12033-89-5. Noah Chemicals San Antonio, Texas. ISO 9001:2015 Certified. Request a Quote Today!
Texas TX
Silicon (IV) Nitride
SILICON (IV) NITRIDE, 99.9% pure, w/2% Magnesium Oxide, < 10 mu avg., Si{3}N{4} / 2% MgO. Noah Chemicals San Antonio, Texas. ISO 9001:2015 Certified. Request a Quote Today!
Texas TX
Silicon (IV) Nitride
SILICON (IV) NITRIDE, ALPHA, 99.7% pure, < 2 microns average, Formula: Si3N4. CAS No. 12033-89-5. Noah Chemicals San Antonio, Texas. ISO 9001:2015 Certified. Request a Quote Today!
Texas TX
Silicon (IV) Nitride
SILICON (IV) NITRIDE, ALPHA, 99.9% pure, < 1 micron average, Formula: Si3N4. CAS No. 12033-89-5. Noah Chemicals San Antonio, Texas. ISO 9001:2015 Certified. Request a Quote Today!
Texas TX
Silicon(IV) nitride, MgO binder, sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.125in) thick, 99.9% (metals basis)
Silicon(IV) nitride, MgO binder, sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.125in) thick, 99.9% (metals basis). Group: Evaporation materials.
Silicon(IV) nitride, MgO binder, sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.125in) thick, 99.9% (metals basis)
Silicon(IV) nitride, MgO binder, sputtering target, 76.2mm (3.0in) dia x 3.18mm (0.125in) thick, 99.9% (metals basis). Group: Evaporation materials.
Silicon(IV) nitride, MgO binder, sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.250in) thick, 99.9% (metals basis)
Silicon(IV) nitride, MgO binder, sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.250in) thick, 99.9% (metals basis). Group: Evaporation materials.
Siliconnitride Nanopowder<50NM
Siliconnitride Nanopowder<50NM. CAS No: 12033-89-5
Sarchem Laboratories New Jersey NJ
3-Aminopropyltriethoxysilane
3-Aminopropyltriethoxysilane (APTES) acts as a strong glue to immobilize biomolecules such as antibodies and enzymes to silicon and silicon derivatives such as siliconnitride (Si 3 N 4 )) on. 3-Aminopropyltriethoxysilane also acts as a spacer, providing biomolecules with more spatial freedom during immobilization for higher specific activity. 3-Aminopropyltriethoxysilane can form a more stable, sensitive, and highly biocompatible bioanalytical platform by immobilizing biomolecules onto some solid materials, electrode materials, nanomaterials, and nanocomposites [1] [2]. Uses: Scientific research. Group: Biochemical assay reagents. Alternative Names: γ-Aminopropyltriethoxysilane; APTES. CAS No. 919-30-2. Pack Sizes: 10 g; 50 g; 100 g. Product ID: HY-D0175.
Graphene Oxide (GO) TEM Support Films
Graphene Oxide (GO) support film is available as Single Layer (0.6~1nm) or Double Layer (1~1.5nm) measured by EELS. It is hydrophilic and naturally placed over the ultra-flat Silicon Dioxide Substrate, Lacey Carbon (300 Mesh Copper TEM Grids) or Holy SiliconNitride Membranes with typically 50-70% coverage. Available in package of 5, 10 or 25 pieces. A. 300 Mesh Copper TEM grid with Lacey Carbon film; B. 00nm-thick 2μm Diameter Holey SiliconNitride Membrane on 200μm-thick Silicon Substrate; C. 5x5mm 675μm-thick Silicon Die with 200nm Thermal Oxide. Uses: 1) catalyst2) supercapacitors3) solar energy4) graphene semiconductor chips5) conductive graphene film6) graphene computer memory7) biomaterials8) transparent conductive coatings. Group: Graphenes.
Graphene Oxide (GO) TEM Support Films
Graphene Oxide (GO) support film is available as Single Layer (0.6~1nm) or Double Layer (1~1.5nm) measured by EELS. It is hydrophilic and naturally placed over the ultra-flat Silicon Dioxide Substrate, Lacey Carbon (300 Mesh Copper TEM Grids) or Holy SiliconNitride Membranes with typically 50-70% coverage. Available in package of 5, 10 or 25 pieces. A. 300 Mesh Copper TEM grid with Lacey Carbon film; B. 00nm-thick 2μm Diameter Holey SiliconNitride Membrane on 200μm-thick Silicon Substrate; C. 5x5mm 675μm-thick Silicon Die with 200nm Thermal Oxide. Uses: 1) catalyst2) supercapacitors3) solar energy4) graphene semiconductor chips5) conductive graphene film6) graphene computer memory7) biomaterials8) transparent conductive coatings. Group: other nano materials.
Silicon dioxide
Nanoparticles: Oxides, Nitrides, and Other Ceramics. Uses: For analytical and research use. Group: Reagents. CAS No. 7631-86-9.
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