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| Product | Description | |
|---|---|---|
| 1,1,2,2-Tetramethyldisilane | 98%. Group: Vapor deposition precursors. |  |
| [1, 1'-Bis (diphenylphosphino) ferrocene]tetracarbonylmolybdenum (0) | [1, 1'-Bis (diphenylphosphino) ferrocene]tetracarbonylmolybdenum (0). Group: Vapor deposition precursors. Alternative Names: 67292-28-8; Mo(dppf)(CO)4; DTXSID20746473; PUBCHEM_71311126; [1,1 inverted exclamation marka-Bis (diphenylphosphino) ferrocene]tetracarbonylmolybdenum (0). CAS No. 67292-28-8. Product ID: carbon monoxide; cyclopenta-1,4-dien-1-yl(diphenyl)phosphane; iron(2+); molybdenum. Molecular formula: 762.381g/mol. Mole weight: C38H28FeMoO4P2. [C-]#[O+]. [C-]#[O+]. [C-]#[O+]. [C-]#[O+]. [CH-]1C=CC (=C1)P (C2=CC=CC=C2)C3=CC=CC=C3. [CH-]1C=CC (=C1)P (C2=CC=CC=C2)C3=CC=CC=C3. [Fe+2]. [Mo]. InChI=1S/2C17H14P. 4CO. Fe. Mo/c2*1-3-9-15 (10-4-1)18 (17-13-7-8-14-17)16-11-5-2-6-12-16; 4*1-2; ; /h2*1-14H; ; ; ; ; ; /q2*-1; ; ; ; ; +2;. ZHNSVORDFDTSPT-UHFFFAOYSA-N. |  |
| 1,1?-Diethylferrocene | 98%. Group: Vapor deposition precursors. | |
| 1,2-Dichlorotetramethyldisilane | 95%. Group: Vapor deposition precursors. | |
| 1,2-Dichlorotetramethyldisilane | Liquid. Group: Vapor deposition precursorspolymers. Alternative Names: 1,2-Dichloro-1,1,2,2-tetramethyl-disilane. CAS No. 4342-61-4. Pack Sizes: 10 g; 100 g. Product ID: Chloro-[chloro (dimethyl)silyl]-dimethylsilane. Molecular formula: 187.21. Mole weight: C4H12Cl2Si2. C[Si](C)([Si](C)(C)Cl)Cl. InChI=1S/C4H12Cl2Si2/c1-7(2, 5)8(3, 4)6/h1-4H3. SFAZXBAPWCPIER-UHFFFAOYSA-N. 95%+. | |
| 1,3-Diethyl-1,1,3,3-tetramethyldisilazane | >98.0%. Group: Vapor deposition precursors. | |
| 2,4,6,8,10-Pentamethylcyclopentasiloxane | 96%. Group: Vapor deposition precursors. | |
| (Acetylacetonato)(1,5-cyclooctadiene)rhodium(I) | 99%. Group: Vapor deposition precursors. | |
| (Acetylacetonato)(1,5-cyclooctadiene)rhodium(I) | Atomic number of base material: 45 Rhodium. Uses: Umicore precatalysts for asymmetric and cross-coupling catalysis. Group: Vapor deposition precursors. Alternative Names: (1Z,5Z)-Cycloocta-1,5-diene; (Z)-4-hydroxypent-3-en-2-one; rhodium. CAS No. 12245-39-5. Pack Sizes: 100 mg in glass insert. Product ID: (1Z,5Z)-cycloocta-1,5-diene; (Z)-4-hydroxypent-3-en-2-one; rhodium. Molecular formula: 311.2. Mole weight: C13H20O2Rh. CC(=CC(=O)C)O.C1CC=CCCC=C1.[Rh]. InChI=1S/C8H12. C5H8O2. Rh/c1-2-4-6-8-7-5-3-1; 1-4(6)3-5(2)7; /h1-2, 7-8H, 3-6H2; 3, 6H, 1-2H3; /b2-1-, 8-7-; 4-3-. BUYVJWVYKPKZEX-DWVXZKBMSA-N. 97%. | |
| Allyl(cyclopentadienyl)nickel(II) | 97%. Group: Vapor deposition precursors. | |
| Aluminum-doped Zinc Oxide Nanoparticles / Nanopowder (AZO) | Aluminum-doped Zinc Oxide Nanoparticles / Nanopowder (AZO). Group: Vapor deposition precursors. Alternative Names: Aluminum Zinc Oxide. CAS No. 37275-76-6. Product ID: dialuminum; zinc; oxygen(2-). Molecular formula: 183.34. Mole weight: Al2O4Zn. [O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2]. InChI=1S/2Al.4O.Zn/q2*+3;4*-2;+2. DSRXRJYQGIXPCQ-UHFFFAOYSA-N. 99%, 99.9%, 99.99%, 99.999%. | |
| Aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate) | 98%. Group: Vapor deposition precursors. | |
| Barium bis(2,2,6,6-tetramethyl-3,5-heptanedionate)hydrate | Barium bis(2,2,6,6-tetramethyl-3,5-heptanedionate)hydrate. Group: Vapor deposition precursors. CAS No. 17594-47-7. Product ID: barium(2+); (Z)-2,2,6,6-tetramethyl-5-oxohept-3-en-3-olate. Molecular formula: 503.9g/mol. Mole weight: C22H38BaO4. CC(C)(C)C(=CC(=O)C(C)(C)C)[O-]. CC(C)(C)C(=CC(=O)C(C)(C)C)[O-]. [Ba+2]. InChI=1S/2C11H20O2.Ba/c2*1-10(2, 3)8(12)7-9(13)11(4, 5)6;/h2*7, 12H, 1-6H3;/q;;+2/p-2/b2*8-7-. NYBMVAOYALBBBH-ATMONBRVSA-L. | |
| (Bicyclo[2.2.1]hepta-2,5-diene)tetracarbonylmolybdenum(0) | 95%. Group: Vapor deposition precursors. | |
| (Bicyclo[2.2.1]hepta-2,5-diene)tetracarbonylmolybdenum(0) | (Bicyclo[2.2.1]hepta-2,5-diene)tetracarbonylmolybdenum(0). Uses: The product may be used to modify multiwalled carbon nanotubes (mwcnts) paste electrode with tetracarbonylmolybdenum for the determination of cu(II) by square wave anodic stripping voltammetry. Group: Vapor deposition precursors. Alternative Names: (Norbornadiene) tetracarbonylmolybdenum, Bicyclo[2.2.1]heptadienemolybdenum tetracarbonyl, Tetracarbonyl(2,5-norbornadiene)molybdenum. CAS No. 12146-37-1. Pack Sizes: 1 g in glass bottle. Product ID: bicyclo[2.2.1]hepta-2,5-diene; carbon monoxide; molybdenum. Molecular formula: 300.12. Mole weight: C11H8MoO4. [Mo]. [C-]#[O+]. [C-]#[O+]. [C-]#[O+]. [C-]#[O+]. C1C2C=CC1C=C2. 1S/C7H8.4CO.Mo/c1-2-7-4-3-6(1)5-7; 4*1-2; /h1-4, 6-7H, 5H2; ; ; ; ; , UZHYHBPCAGKHGZ-UHFFFAOYSA-N. UZHYHBPCAGKHGZ-UHFFFAOYSA-N. | |
| Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)calcium(II) | Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)calcium(II). Group: Vapor deposition precursors. Alternative Names: Calcium-2,2,6,6-tetramethyl-3,5-heptanedionate. CAS No. 118448-18-3. Product ID: Calcium; (Z)-2,2,6,6-tetramethyl-5-oxohept-3-en-3-olate. Molecular formula: 406.6. Mole weight: C22H38CaO4. CC(C)(C)C(=CC(=O)C(C)(C)C)[O-]. CC(C)(C)C(=CC(=O)C(C)(C)C)[O-]. [Ca+2]. InChI=1S/2C11H20O2.Ca/c2*1-10(2, 3)8(12)7-9(13)11(4, 5)6;/h2*7, 12H, 1-6H3;/q;+2/p-2/b2*8-7-. DOOFPPIHJGRIGW-ATMONBRVSA-L. 95%+. | |
| Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)copper(II) | Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)copper(II). Group: Vapor deposition precursors. Alternative Names: COPPER BIS(DIPIVALOYLMETHANATE); COPPER BIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE); COPPER BIS(2,2,6,6-TETRAMETHYLHEPTANE-3,5-DIONE); COPPER(II) BIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE); COPPER II 2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE; CU(TMHD)2; COPPER(II. CAS No. 14040-05-2. Product ID: copper; 2,2,6,6-tetramethylheptane-3,5-dione. Molecular formula: 430.08. Mole weight: C22< / sub>H38< / sub>CuO4< / sub>. LJNKLCWPWAPYME-UHFFFAOYSA-N. 96%. | |
| Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(II) | Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)nickel(II). Group: Vapor deposition precursors. Alternative Names: Nickel (2,2,6,6-tetramethyl-3,5-heptanedionate). CAS No. 14481-08-4. Product ID: Nickel(2+); (E)-2,2,6,6-tetramethyl-5-oxohept-3-en-3-olate. Molecular formula: 425.2. Mole weight: C22H40NiO4. CC(C)(C)C(=CC(=O)C(C)(C)C)[O-]. CC(C)(C)C(=CC(=O)C(C)(C)C)[O-]. [Ni+2]. InChI=1S/2C11H20O2.Ni/c2*1-10(2, 3)8(12)7-9(13)11(4, 5)6;/h2*7, 12H, 1-6H3;/q;+2/p-2/b2*8-7+. PIIJAZNTPALBJL-ORWWTJHYSA-L. 95%+. | |
| Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)strontium(II) | Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)strontium(II). Group: Vapor deposition precursors. Alternative Names: Strontium bis(dipivaloylmethane). CAS No. 36830-74-7. Product ID: Strontium; (Z)-2,2,6,6-tetramethyl-5-oxohept-3-en-3-olate. Molecular formula: 454.2. Mole weight: C22< / sub>H38< / sub>O4< / sub>Sr. CC(C)(C)C(=CC(=O)C(C)(C)C)[O-]. CC(C)(C)C(=CC(=O)C(C)(C)C)[O-]. [Sr+2]. InChI=1S/2C11H20O2.Sr/c2*1-10(2, 3)8(12)7-9(13)11(4, 5)6;/h2*7, 12H, 1-6H3;/q;+2/p-2/b2*8-7-. WQTMVGGQTAPQJQ-ATMONBRVSA-L. 95%+. | |
| Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc(II) | 97%. Group: Vapor deposition precursors. | |
| Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc(II) | Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc(II). Group: Vapor deposition precursors. Alternative Names: Zinc tetramethylheptanedionato; Zinc, bis(2,2,6,6-tetramethyl-3,5-heptanedionato)-; Zinc, bis(2,2,6,6-tetramethyl-3,5-heptanedionato-O,O)-, (T-4)-; ZN(TMHD)2; ZINC BIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE); ZINC 2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE; BIS(2,2. CAS No. 14363-14-5. Product ID: 2,2,6,6-tetramethylheptane-3,5-dione; zinc. Molecular formula: 431.92. Mole weight: Zn(OCC(CH3)3CHCOC(CH3)3)2. FGRQBMHHOXESRC-UHFFFAOYSA-N. 96%. | |
| Bis(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate)copper(II) | Bis(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate)copper(II). Group: Vapor deposition precursors. Alternative Names: Copper bis(6,6,7,7,8,8,8-heptafluoro-2,2-diMethyl-3,5-octane. CAS No. 80289-21-0. Product ID: Dicopper; (Z)-6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-5-oxooct-3-en-3-olate. Molecular formula: 717.4. Mole weight: C20H20Cu2F14O4. CC (C) (C)C (=CC (=O)C (C (C (F) (F)F) (F)F) (F)F)[O-]. CC (C) (C)C (=CC (=O)C (C (C (F) (F)F) (F)F) (F)F)[O-]. [Cu+2]. [Cu+2]. InChI=1S/2C10H11F7O2.2Cu/c2*1-7(2, 3)5(18)4-6(19)8(11, 12)9(13, 14)10(15, 16)17;/h2*4, 18H, 1-3H3;/q;2*+2/p-2/b2*5-4-. KYVXQSFIEOMONY-WSTITRFPSA-L. 95%+. | |
| Bis(acetato-O)triphenylbismuth(V) | 98%. Group: Vapor deposition precursors. | |
| Bis(acetato-O)triphenylbismuth(V) | Bis(acetato-O)triphenylbismuth(V). Group: Vapor deposition precursors. Alternative Names: Diacetoxytriphenylbismuth, Triphenylbismuth diacetate. CAS No. 7239-60-3. Pack Sizes: 10 g in glass bottle. Molecular formula: 558.38. Mole weight: (CH3CO2)2Bi(C6H5)3. CC (=O)O[Bi] (OC (C)=O) (c1ccccc1) (c2ccccc2)c3ccccc3. 1S/3C6H5. 2C2H4O2. Bi/c3*1-2-4-6-5-3-1; 2*1-2(3)4; /h3*1-5H; 2*1H3, (H, 3, 4); /q; ; ; ; ; +2/p-2, UXYBKDNBDQNDNV-UHFFFAOYSA-L. UXYBKDNBDQNDNV-UHFFFAOYSA-L. >98.0%(T). | |
| Bis[bis(trimethylsilyl)amino]tin ii | Bis[bis(trimethylsilyl)amino]tin ii. Group: Vapor deposition precursors. Alternative Names: BIS[BIS(TRIMETHYLSILYL)AMINO]TIN II; TIN II BIS(HEXAMETHYLDISILAZIDE); TIN II BIS(BIS(TRIMETHYLSILYL)AMIDE); BIS[BIS (TRIMETHYLSILYL)AMINO]TIN (ll), 95%. CAS No. 59863-13-7. Product ID: bis[bis(trimethylsilyl)amino]tin. Molecular formula: 439.5g/mol. Mole weight: C12H36N2Si4Sn. C[Si] (C) (C)N ([Si] (C) (C)C)[Sn]N ([Si] (C) (C)C)[Si] (C) (C)C. InChI=1S/2C6H18NSi2.Sn/c2*1-8(2, 3)7-9(4, 5)6;/h2*1-6H3;/q2*-1;+2. WLNIUEYAQZRJFS-UHFFFAOYSA-N. | |
| Bis(cyclopentadienyl)chromium(II) | 95%. Group: Vapor deposition precursors. | |
| Bis(cyclopentadienyl)chromium(II) | Bis(cyclopentadienyl)chromium(II). Uses: Catalyst for: stereoselective pinacol-type cross-coupling reactions thermal homo-polymerization and co-polymerization reactions nozaki-hiyama-kishi reactions (additions of organic halides to aldehydes). Group: Vapor deposition precursors. Alternative Names: Chromocene, Di(cyclopentadienyl)chromium(II). CAS No. 1271-24-5. Pack Sizes: 1 g in glass bottle. Product ID: chromium(2+); cyclopenta-1,3-diene. Molecular formula: 182.18. Mole weight: Cr(C5H5)2. [Cr]. [CH]1[CH][CH][CH][CH]1. [CH]2[CH][CH][CH][CH]2. 1S/2C5H5.Cr/c2*1-2-4-5-3-1; /h2*1-5H; , OXPNGPODCRFNTM-UHFFFAOYSA-N. OXPNGPODCRFNTM-UHFFFAOYSA-N. 96%. | |
| Bis(cyclopentadienyl)cobalt | Bis(cyclopentadienyl)cobalt. Group: Vapor deposition precursors. Alternative Names: bis-(eta5-Cyclopentadienyl) cobalt; Cobalt, bis(eta5-cyclopentadienyl)-; Cobalt, bis(eta5-2,4-cyclopentadien-1-yl)-; Cobalt, di-pi-cyclopentadienyl-; cobalt,bis(η5-2,4-cyclopentadien-1-yl)-; Dicyclopentadienylcobalt; di-pi-cyclopentadienyl-cobal; Kobaltocen. CAS No. 1277-43-6. Product ID: cobalt(2+); cyclopenta-1,3-diene. Molecular formula: 189.12. Mole weight: C10H10Co 10*. ILZSSCVGGYJLOG-UHFFFAOYSA-N. 96%. | |
| Bis(cyclopentadienyl)dimethylhafnium | Bis(cyclopentadienyl)dimethylhafnium. Group: Vapor deposition precursors. Alternative Names: Dimethylbis(cyclopentadienyl)hafnium. CAS No. 37260-88-1. Product ID: Carbanide; cyclopenta-1,3-diene; hafnium(4+). Molecular formula: 338.74. Mole weight: C12H16Hf 10*. [CH3-]. [CH3-]. C1C=CC=[C-]1. C1C=CC=[C-]1. [Hf+4]. InChI=1S/2C5H5. 2CH3. Hf/c2*1-2-4-5-3-1; /h2*1-3H, 4H2; 2*1H3; /q4*-1; +4. CMPSFTFHQOLFAJ-UHFFFAOYSA-N. 95%+. | |
| Bis(cyclopentadienyl)molybdenum(IV) dichloride | 95%. Group: Vapor deposition precursors. | |
| Bis(cyclopentadienyl)niobium(IV) dichloride | 95%. Group: Vapor deposition precursors. | |
| Bis(cyclopentadienyl)niobium(IV) dichloride | Bis(cyclopentadienyl)niobium(IV) dichloride. Group: Vapor deposition precursors. Alternative Names: NIOBOCENE DICHLORIDE; DI(CYCLOPENTADIENYL)NIOBIUM DICHLORIDE; BIS(CYCLOPENTADIENYL)NIOBIUM DICHLORIDE; dichlorobis(eta(sup5)-2,4-cyclopentadien-1-yl)-niobiu; Dichlorodicyclopentadienylniobium; Dichloroniobocene; Niobium, bis(eta5-cyclopentadienyl) dichloride; Ni. CAS No. 12793-14-5. Molecular formula: 294g/mol. Mole weight: C10H10Cl2Nb. [CH]1[CH][CH][CH][CH]1. [CH]1[CH][CH][CH][CH]1. Cl[Nb]Cl. InChI=1S/2C5H5. 2ClH. Nb/c2*1-2-4-5-3-1; ; ; /h2*1-5H; 2*1H; /q; ; ; ; +2/p-2. CYMWZQTUXXEBCR-UHFFFAOYSA-L. | |
| Bis(cyclopentadienyl)ruthenium (II) | Bis(cyclopentadienyl)ruthenium (II). Uses: Intermediate for high-temperature compounds and for uv radiation absorbers in paints. Group: Vapor deposition precursors. Alternative Names: ruthenium,bis(η5-2,4-cyclopentadien-1-yl)-; DICYCLOPENTADIENYL RUTHENIUM; BIS(CYCLOPENTADIENYL)RUTHENIUM; RUTHENOCENE; Bis(cyclopentadienyl)ruthenium, (Ruthenocene); RUTHENOCENE 99%; Ru43.2%min; Bis(cyclopentadienyl)ruthenium, 99%(99.9%-Ru)(Ruthenocene). CAS No. 1287-13-4. Product ID: cyclopenta-1,3-diene; ruthenium(2+). Molecular formula: 231.3g/mol. Mole weight: C10H10Ru. C1C=CC=[C-]1.C1C=CC=[C-]1.[Ru+2]. InChI=1S/2C5H5.Ru/c2*1-2-4-5-3-1; /h2*1-3H, 4H2; /q2*-1; +2. ZPGYFXYKGHZSQU-UHFFFAOYSA-N. Ru ≥42.8%. | |
| Bis(cyclopentadienyl)ruthenium(II) | 97%. Group: Vapor deposition precursors. | |
| Bis(cyclopentadienyl)tungsten(IV) dichloride | Bis(cyclopentadienyl)tungsten(IV) dichloride. Group: Vapor deposition precursors. Alternative Names: BIS(CYCLOPENTADIENYL)TUNGSTEN DICHLORIDE; BIS(CYCLOPENTADIENYL)TUNGSTEN(IV) DICHLORIDE; Bis (cyclopentadienyl) tungstendichloride, 99%; Bis(cyclopentadienyl)tungsten dichloride,98%. CAS No. 12184-26-8. Product ID: cyclopenta-1,3-diene; dichlorotungsten. Molecular formula: 384.93. Mole weight: C10< / sub>H10< / sub>Cl2< / sub>W 10*. C1C=CC=[C-]1.C1C=CC=[C-]1.Cl[W]Cl. ZNZLXYIBJJJQAH-UHFFFAOYSA-L. 96%. | |
| Bis(cyclopentadienyl)tungsten(IV) dihydride | 97%. Group: Vapor deposition precursors. | |
| Bis(cyclopentadienyl)tungsten(IV) dihydride | Bis(cyclopentadienyl)tungsten(IV) dihydride. Group: Vapor deposition precursors. Alternative Names: Bis(η5 -cyclopentadienyl)tungsten dihydride, Bis (cyclopentadienyl)dihydrotungsten, Dicyclopentadienyltungsten dihydride. CAS No. 1271-33-6. Pack Sizes: 1 g in ampule. Product ID: cyclopenta-1,3-diene; tungsten dihydride. Molecular formula: 316.04. Mole weight: C10H12W-2. [H][W][H]. [CH]1[CH][CH][CH][CH]1. [CH]2[CH][CH][CH][CH]2. 1S/2C5H5.W.2H/c2*1-2-4-5-3-1; ; ; /h2*1-5H; ; ; , FCGFDFIKNFHEHZ-UHFFFAOYSA-N. FCGFDFIKNFHEHZ-UHFFFAOYSA-N. | |
| Bis(cyclopentadienyl)vanadium(II) | Bis(cyclopentadienyl)vanadium(II). Group: Vapor deposition precursors. Alternative Names: BIS(CYCLOPENTADIENYL)VANADIUM; 1277-47-0; dicyclopentadienylvanadium; ACMC-1BT3H; CTK4B5711; AKOS025294260; TC-167713. CAS No. 1277-47-0. Product ID: cyclopenta-1,3-diene; vanadium(2+). Molecular formula: 181.131g/mol. Mole weight: C10H10V. C1C=CC=[C-]1.C1C=CC=[C-]1.[V+2]. InChI=1S/2C5H5.V/c2*1-2-4-5-3-1; /h2*1-3H, 4H2; /q2*-1; +2. KTKDULBCFYEWFV-UHFFFAOYSA-N. | |
| Bis(cyclopentadienyl)zirconium(IV) dihydride | 95%. Group: Vapor deposition precursors. | |
| Bis(cyclopentadienyl)zirconium(IV) dihydride | Bis(cyclopentadienyl)zirconium(IV) dihydride. Group: Vapor deposition precursors. Alternative Names: Zirconcene dihydride. CAS No. 37342-98-6. Pack Sizes: 1 g in ampule. Product ID: cyclopenta-1,3-diene; hydride; zirconium(4+). Molecular formula: 223.43. Mole weight: C10H12Zr. [H][Zr][H]. [CH]1[CH][CH][CH][CH]1. [CH]2[CH][CH][CH][CH]2. 1S/2C5H5.Zr.2H/c2*1-2-4-5-3-1; ; ; /h2*1-5H; ; ; , VQFBYDXAIAGBFA-UHFFFAOYSA-N. VQFBYDXAIAGBFA-UHFFFAOYSA-N. | |
| Bis(ethylcyclopentadienyl)cobalt(II) | Atomic number of base material: 27 Cobalt. Uses: This metallocene compound may be encapsulated in single walled carbon nanotubes, resulting in a tailored carbon nano structure of specific electronic functionality. Group: Vapor deposition precursors. Alternative Names: 1,1'-Diethylcobaltocene. CAS No. 55940-05-1. Pack Sizes: 1 g in glass bottle. Molecular formula: 245.23. Mole weight: C14H18Co. CC[C]1[CH][CH][CH][CH]1. CC[C]1[CH][CH][CH][CH]1. [Co]. InChI=1S/2C7H9. Co/c2*1-2-7-5-3-4-6-7; /h2*3-6H, 2H2, 1H3. YHCQFTZSIGZRTR-UHFFFAOYSA-N. 95%+. | |
| Bis (isopropylcyclopentadienyl)tungsten (IV) dihydride | Bis (isopropylcyclopentadienyl)tungsten (IV) dihydride. Group: Vapor deposition precursors. Alternative Names: Bis(i-propylcyclopentadienyl)tungsten dihydride. CAS No. 64561-25-7. Pack Sizes: 2.5 g in ampule. Product ID: 2-propan-2-ylcyclopenta-1,3-diene; tungsten dihydride. Molecular formula: 398.2. Mole weight: (C5H4CH(CH3)2)2WH2. CC(C)[C]1[CH][CH][CH][CH]1. CC(C)[C]1[CH][CH][CH][CH]1. [W]. InChI=1S/2C8H11. W/c2*1-7(2)8-5-3-4-6-8; /h2*3-7H, 1-2H3. VRMGPHYEHNLCQW-UHFFFAOYSA-N. 95%+. | |
| Bis(methyl-?5?cyclopentadienyl)methoxymethylhafnium | packaged for use in deposition systems. Group: Vapor deposition precursors. | |
| Bis(methyl-?5?cyclopentadienyl)methoxymethylzirconium | packaged for use in deposition systems. Group: Vapor deposition precursors. | |
| Bis(methyl-η 5?cyclopentadienyl)dimethylhafnium | Bis(methyl-η 5?cyclopentadienyl)dimethylhafnium. Group: Vapor deposition precursors. CAS No. 68193-43-1. Product ID: carbanide; hafnium(4+); 2-methylcyclopenta-1,3-diene. Molecular formula: 366.8g/mol. Mole weight: C14H20Hf. [CH3-]. [CH3-]. CC1=C[CH-]C=C1. CC1=C[CH-]C=C1. [Hf+4]. InChI=1S/2C6H7. 2CH3. Hf/c2*1-6-4-2-3-5-6; ; ; /h2*2-5H, 1H3; 2*1H3; /q4*-1; +4. DHGOQKZVEBXSOU-UHFFFAOYSA-N. | |
| Bis(methyl-η5-cyclopentadienyl)methoxymethylhafnium | Bis(methyl-η5-cyclopentadienyl)methoxymethylhafnium. Group: Vapor deposition precursors. | |
| Bis (methyl-η 5-cyclopentadienyl) methoxymethylzirconium | Atomic number of base material: 40 Zirconium. Uses: Precursors packaged for depositions systems. Group: Vapor deposition precursors. Alternative Names: ZRCMMM, ZrD-CO4. Pack Sizes: 10 g in stainless steel cylinder,Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides. Molecular formula: 295.53. Mole weight: Zr(CH3C5H4)2CH3OCH3. C[C]1[C][C][C][C]1. C[C]2[C][C][C][C]2. C[Zr]OC. 1S/2C6H7. CH3O. CH3. Zr/c2*1-6-4-2-3-5-6; 1-2; ; /h2*2-5H, 1H3; 1H3; 1H3; /q; ; -1; ; +1, LFGIFPGCOXPKMG-UHFFFAOYSA-N. LFGIFPGCOXPKMG-UHFFFAOYSA-N. | |
| Bis(pentafluorophenyl)zinc | 97%. Group: Vapor deposition precursors. | |
| Bis (pentamethylcyclopentadienyl)barium tetrahydrofuran adduct | Bis (pentamethylcyclopentadienyl)barium tetrahydrofuran adduct. Group: Vapor deposition precursors. Molecular formula: 552g/mol. Mole weight: C28H46BaO2. C[C]1[C]([C]([C]([C]1C)C)C)C. C[C]1[C]([C]([C]([C]1C)C)C)C. C1CCOC1. C1CCOC1. [Ba]. InChI=1S/2C10H15. 2C4H8O. Ba/c2*1-6-7(2)9(4)10(5)8(6)3; 2*1-2-4-5-3-1; /h2*1-5H3; 2*1-4H2. PPYZNMBXXMAWTN-UHFFFAOYSA-N. | |
| Bis (pentamethylcyclopentadienyl) chromium | Bis (pentamethylcyclopentadienyl) chromium. Group: Vapor deposition precursors. Alternative Names: DECAMETHYLCHROMOCENE; BIS (PENTAMETHYLCYCLOPENTADIENYL) CHROMIUM; BIS (PENTAMETHYLCYCLOPENTADIENYL) CHROMIUM (II) ; Bis (pentamethylcyclopentadienyl)chrom; Bis (pentamethylcyclopentadienyl) chromium, min. 95% (Decamethylchromocene) ; BIS (PENTAMETHYLCYCLOPENTADIENYL)CHROMIU. CAS No. 74507-61-2. Molecular formula: 322.45. Mole weight: C20H30Cr10. 96%. | |
| Bis(pentamethylcyclopentadienyl)chromium(II) | 96%. Group: Vapor deposition precursors. | |
| Bis (pentamethylcyclopentadienyl)cobalt | Bis (pentamethylcyclopentadienyl)cobalt. Group: Vapor deposition precursors. Alternative Names: BIS (PENTAMETHYLCYCLOPENTADIENYL)COBALT; DECAMETHYLCOBALTOCENE; bis (pentamethylcyclopentadienyl)cobalt (II); Bis (pentamethylcyclopentadienyl)cobalt (II), CoCp*2, Decamethylcobaltocene; CoCp*2; Cobaltocene,decamethyl-. CAS No. 74507-62-3. Molecular formula: 329.4g/mol. Mole weight: C20H30Co. CC1=C([C](C(=C1C)C)C)C. CC1=C([C](C(=C1C)C)C)C. [Co]. InChI=1S/2C10H15. Co/c2*1-6-7(2)9(4)10(5)8(6)3; /h2*1-5H3. XDHJNPINFJSJJB-UHFFFAOYSA-N. | |
| Bis (pentamethylcyclopentadienyl) dimethylzirconium (IV) , 99% | Bis (pentamethylcyclopentadienyl) dimethylzirconium (IV) , 99%. Uses: Bis (pentamethylcyclopentadienyl) dimethylzirconium is a zirconium complex which can be used as a polymerization catalyst. Group: Vapor deposition precursors. Alternative Names: BIS (PENTAMETHYLCYCLOPENTADIENYL) ZIRCONIUM DIMETHYL; DIMETHYLBIS (PENTAMETHYLCYCLOPENTADIENYL) ZIRCONIUM; Zirconium, dimethylbis[(1,2,3,4,5-eta)-1,2,3,4,5-pentamethyl-2,4-cyclopentadien-1-yl]-; dimethylbis (pentamethylcyclopentadienyl) zirconium (iv) ; Bis(pentameth. CAS No. 67108-80-9. Molecular formula: 391.7g/mol. Mole weight: C22H36Zr. [CH3-]. [CH3-]. C[C]1[C]([C]([C]([C]1C)C)C)C. C[C]1[C]([C]([C]([C]1C)C)C)C. [Zr+2]. InChI=1S/2C10H15. 2CH3. Zr/c2*1-6-7(2)9(4)10(5)8(6)3; ; ; /h2*1-5H3; 2*1H3; /q; ; 2*-1; +2. KDKNVCQXFIBDBD-UHFFFAOYSA-N. | |
| Bis (pentamethylcyclopentadienyl)iron (II) | Bis (pentamethylcyclopentadienyl)iron (II). Group: Vapor deposition precursors. Alternative Names: 1, 1', 2, 2', 3, 3', 4, 4', 5, 5'-Decamethylferrocene. CAS No. 12126-50-0. Molecular formula: 326.3. Mole weight: Fe(C5(CH3)5)2. [Fe]. C[C]1[C](C)[C](C)[C](C)[C]1C. C[C]2[C](C)[C](C)[C](C)[C]2C. InChI=1S/2C10H15. Fe/c2*1-6-7(2)9(4)10(5)8(6)3; /h2*1-5H3. OZHNSXNGSKKWMC-UHFFFAOYSA-N. 95%+. | |
| Bis(pentamethylcyclopentadienyl)iron(II) | 97%. Group: Vapor deposition precursors. | |
| Bis (pentamethylcyclopentadienyl) magnesium | Bis (pentamethylcyclopentadienyl) magnesium. Group: Vapor deposition precursors. Alternative Names: Bis(1,2,3,4,5-pentamethyl-2,4-cyclopentadien-1-yl)magnesium. CAS No. 74507-64-5. Product ID: magnesium; 1,2,3,4,5-pentamethylcyclopenta-1,3-diene. Molecular formula: 294.77. Mole weight: C20H30Mg 10*. C[C-]1C(=C(C(=C1C)C)C)C. C[C-]1C(=C(C(=C1C)C)C)C. [Mg+2]. QZNMZKZCVOJICG-UHFFFAOYSA-N. Mg 99%. | |
| Bis (pentamethylcyclopentadienyl) manganese | Bis (pentamethylcyclopentadienyl) manganese. Group: Vapor deposition precursors. Alternative Names: Decamethylmanganocene. CAS No. 67506-86-9. Molecular formula: 325.39. Mole weight: C20H30Mn 10*. [Mn]. C[C]1[C](C)[C](C)[C](C)[C]1C. C[C]2[C](C)[C](C)[C](C)[C]2C. InChI=1S/2C10H15. Mn/c2*1-6-7(2)9(4)10(5)8(6)3; /h2*1-5H3. ALEXWXWETMUIKL-UHFFFAOYSA-N. 95%+. | |
| Bis(tert-butylimino)bis(tert-butylamino)tungsten | 99.9% trace metals basis. Group: Vapor deposition precursors. | |
| Bis(tert-butylimino)bis(tert-butylamino)tungsten | Bis(tert-butylimino)bis(tert-butylamino)tungsten. Group: Vapor deposition precursors. CAS No. 1578257-35-8. Pack Sizes: 1 g in glass bottle. Molecular formula: 470.34. Mole weight: (C4H9NH)2W(C4H9N)2. CC (C) (C)N[W] (NC (C) (C)C) (=NC (C) (C)C)=NC (C) (C)C. InChI=1S/2C4H10N.2C4H9N.W/c4*1-4(2, 3)5;/h2*5H, 1-3H3;2*1-3H3;/q2*-1;+2. SJPFZRACRCONRE-UHFFFAOYSA-N. 95%+. | |
| Bis (triisopropylcyclopentadienyl)barium tetrahydrofuran adduct | Bis (triisopropylcyclopentadienyl)barium tetrahydrofuran adduct. Uses: Cyclopentadienyl compounds of barium are very commonly used ald/cvd precursors for depositing barium containing thin films; example batio3; bazro3 films. cyclopentadienyl groups form weaker bonds with barium, but have stronger bonds within the ligand thus preventing carbon contamination of the films. cyclopentadienyl precursors of barium sublime under reduced pressures, with tetrahydrofuran adducts showing volatility also under atmospheric pressure. the tetrahydrofuran adducts loose the coordinated thf when evaporated. complexes with bulky cyclopentadienyl ligands are more thermally stable and volatile.barium containing thin films finds applications as host lattices for luminescent materials, high temperature superconductors, high permittivity dielectrics and ferroelectrics. Group: Vapor deposition precursors. Alternative Names: Bis(1, 2, 4-triisopropylcyclopentadienyl)barium, Bis[1, 2, 4-tris(1-methylethyl)-2, 4-cyclopentadien-1-yl]barium. Pack Sizes: 1 g in glass bottle. Mole weight: [Ba(C5(C3H7)3H2)2] ? 2(C4H8O). CC(C)[C]1[C][C](C(C)C)[C][C]1C(C)C. CC(C)[C]2[C][C](C(C)C)[C][C]2C(C)C. [Ba]. C3CCOC3. C4CCOC4. 1S/2C14H23. 2C4H8O. Ba. 2H/c2*1-9 (2)12-7-13 (10 (3)4)14 (8-12)11 (5)6; 2*1-2-4-5-3-1; ; ; /h2*7-11H, 1-6H3; 2*1-4H2; ; ; , XPFYNIUESMDERR-UHFFFAOYSA-N. XPFYNIUESMDERR-UHFFFAOYSA-N. | |
| Bis(triisopropylcyclopentadienyl)barium tetrahydrofuran adduct | 98%. Group: Vapor deposition precursors. | |
| Bis (trimethylsilyl)amidohafnium (iv)chloride | Bis (trimethylsilyl)amidohafnium (iv)chloride. Group: Vapor deposition precursors. Alternative Names: HAFNIUM BIS(HEXAMETHYLDISILAZIDE)DICHLORIDE; BIS(TRIMETHYLSILYL)AMIDOHAFNIUM(IV) CHLORIDE; Bis(trimethylsilyl)amidohafnium(IV) chloride, >=95%, 99.99+% metals basis. CAS No. 70969-29-8. Molecular formula: 570.17. Mole weight: C12< / sub>H36< / sub>Cl2< / sub>HfN2< / sub>Si4< / sub>. | |
| Bis(trimethylsilyl)amidohafnium(IV) chloride | ?95%, ?99.99% trace metals basis. Group: Vapor deposition precursors. | |
| Bis(triphenylphosphine)nickel(II) dichloride | 99.99% trace metals basis. Group: Vapor deposition precursors. | |
| Bis(triphenylphosphine)nickel(II) dichloride | dichloridobis (triphenylphosphane)nickel (II) is a metal phosphine complex with the formula NiCl2[P(C6H5)3]2. It is a dark blue crystalline solid. It is used as a catalyst for organic synthesis. Uses: Ni(pph3)2cl2 may be used to undertake nickel assisted phosphination of biaryl o,n triflates with chlorodiphenylphosphine. Group: Vapor deposition precursorspolymerization reagents. Alternative Names: Dichlorobis (triphenylphosphine)nickel (II), NiCl2(PPh3)2, Nickel(II)bis(triphenylphosphine) dichloride. CAS No. 14264-16-5. Pack Sizes: 10 g in glass bottle. Product ID: dichloronickel; triphenylphosphane. Molecular formula: 654.17. Mole weight: C36H32Cl2NiP2-. Cl[Ni]Cl. c1ccc(cc1)P(c2ccccc2)c3ccccc3. c4ccc(cc4)P(c5ccccc5)c6ccccc6. 1S/2C18H15P. 2ClH. Ni/c2*1-4-10-16 (11-5-1) 19 (17-12-6-2-7-13-17) 18-14-8-3-9-15-18; ; ; /h2*1-15H; 2*1H; /q; ; ; ; +2/p-2, ZBRJXVVKPBZPAN-UHFFFAOYSA-L. ZBRJXVVKPBZPAN-UHFFFAOYSA-L. | |
| Bromopentacarbonylmanganese(I) | 98%. Group: Vapor deposition precursors. | |
| Bromopentacarbonylmanganese(I) | Bromopentacarbonylmanganese(I). Group: Vapor deposition precursors. Alternative Names: Bromopentacarbonylmanganese(I), Manganese pentacarbonyl bromide. CAS No. 14516-54-2. Pack Sizes: 5 g in glass bottle. Product ID: carbon monoxide; manganese; bromide. Molecular formula: 274.89. Mole weight: BrMn(CO)5. [Mn]Br. [C-]#[O+]. [C-]#[O+]. [C-]#[O+]. [C-]#[O+]. [C-]#[O+]. 1S/5CO.BrH.Mn/c5*1-2; ; /h; ; ; ; ; 1H; /q; ; ; ; ; ; +1/p-1, OESORJHGSXJTKX-UHFFFAOYSA-M. OESORJHGSXJTKX-UHFFFAOYSA-M. | |
| Chloropentamethyldisilane | 97%. Group: Vapor deposition precursors. | |
| Chloropentamethyldisilane | Chloropentamethyldisilane. Uses: Chloropentamethyldisilane may be used as one of the constituents for the sythesis of silyloxyjulolidine (sin1) as a source of silyl radicals which may be used as photoinitiators for free radical photopolymerization. it may also be used in the preparation of 2-pentamethyldisilanyloxymethyl) phenylpentamethyldisilane. Group: Vapor deposition precursors. Alternative Names: 1,1,1,2,2-Pentamethyl-2-chlorodisilane. CAS No. 1560-28-7. Pack Sizes: 5 g in glass bottle. Product ID: Chloro-dimethyl-trimethylsilylsilane. Molecular formula: 166.79. Mole weight: C5H15ClSi2. C[Si](C)(C)[Si](C)(C)Cl. InChI=1S/C5H15ClSi2/c1-7(2, 3)8(4, 5)6/h1-5H3. GJCAUTWJWBFMFU-UHFFFAOYSA-N. 95%+. | |
| Chromium(0) hexacarbonyl | Chromium(0) hexacarbonyl. Uses: Chromiumhexacarbonyl is a volatile; air stable precursor of chromium(0); widely used for thin film deposition - ald and cvd. the thin films can be grown at room temperature and low pressure by laser cvd. Group: Vapor deposition precursors. Alternative Names: Chromium(0) hexacarbonyl, Chromiumhexacarbonyl, Hexacarbonylchromium(0). CAS No. 13007-92-6. Pack Sizes: 25 g in stainless steel cylinder. Product ID: carbon monoxide; chromium. Molecular formula: 220.06. Mole weight: Cr(CO)6. [Cr]. [C-]#[O+]. [C-]#[O+]. [C-]#[O+]. [C-]#[O+]. [C-]#[O+]. [C-]#[O+]. 1S/6CO.Cr/c6*1-2;,KOTQLLUQLXWWDK-UHFFFAOYSA-N. KOTQLLUQLXWWDK-UHFFFAOYSA-N. | |
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